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  • Koo, A.; Lanke, U.D.; Ruck, B.J.*; Brown, S.A.; Reeves, R.; Bittar, A.*; Trodahl, H.J. 2001. Conductivity, photoconductivity and optical properties of amorphous GaN films. Conference proceedings ; MRS (Materials Research Society) Fall meeting 2001.
  • Lanke, U.D.; Koo, A.; Ruck, B.J.*; Lee, H.K.; Markwitz, A.; Kennedy, V.J.; Ariza, M.J.; Jones, D.J.; Roziere, J.; Bittar, A.*; Trodahl, H.J. 2001. Compositional and structural studies of amorphous GaN grown by ion-assisted deposition. 2001 MRS Fall Meeting.
  • Lanke, U.D.; Granville, S.; Markwitz, A.; Trodahl, H.J.; Koo, A.; Bittar, A.*. 2001. Effect of ion energy on the properties of amorphous GaN films produced by ion assisted deposition. Physics letters. B. Vol.15 (28): p.1355-1360.
  • Lanke, U.D.; Koo, A.; Granville, S.; Markwitz, A.; Trodahl, H.J.; Bittar, A. 2001. Effect of ion energy on the properties of amorphous GaN films produced by ion assisted deposition. International Workshop on Materials Produced and Analysed with Ion Beams, Wellington (2001 : Wellington).
  • Metson, J.B.; Lanke, U.D.; Koo, A.; Ruck, B.J.*; Bittar, A.*. 2002. Amorphous semiconductor thin films examined by x-ray absorption near edge spectroscopy. Bittar, A.*.
  • Ruck, B.J.*; Koo, A.; Lanke, U.D.; Lee, H.K.; Bittar, A.*; Markwitz, A.; Kennedy, N.J.; Ariza, M.J.; Jones, D.J.; Roziere, J.; Metson, J.B.; Brown, S.; Reeves, R.; Trodahl, H.J. 2002. Optoelectronic and structural properties of amorphous GaN. 26th Annual Condensed Matter Physics Meeting : conference handbook, Charles Sturt University, Riverina, Wagga Wagga, NSW, January - February 2002. Conference presentation (page numbers unknown). Australian Institute of Physics.
  • Koo, A.; Ruck, B.J.*; Lanke, U.D.; Metson, J.B.; Ariza, M.J.; Jones,D.J.; Roziere, J.; Bittar, A.*; Trodahl, H.J. 2002. Structural and electronic properties of amorphous GaN. International Conference Physics of Semiconductors (2002 : Edinburgh).
  • Trodahl, H.J.; Ruck, B.J.*; Budde, F.; Koo, A.; Granville, S.; Bittar, A.*; Williams, G.V.M.; Grigorescu, C.E.A.; Notonier, R.; Tonetto, A. 2004. Nanostructured amorphous group III nitrides : Potential for refractive index engineering. Proceedings of 2004 6th International Conference on Transparent Optical Networks, 2004. Volume: 2. Vol.2, p.151-153. IEEE.
  • Ruck, B.J.*; Koo, A.; Lanke, U.D.; Budde, F.; Trodahl, H.J.; Williams, G.V.M.; Bittar, A.*. 2004. Filled and empty states of disordered GaN studied by x-ray absorption and emission. Journal of applied physics. Vol.96 (6), p.3571-3573.
  • Ruck, B.J.*; Koo, A.; Lanke, U.D.; Budde, F.; Granville, S.; Bittar, A.*. 2004. Quantitative study of molecular N<sub>2</sub> trapped in disordered GaN:O films. Physical review. B, Condensed matter and materials physics. Vol.70 no.23, p.1-5.
  • Granville, S.; Budde, F.; Koo, A.; Ruck, B.J.*; Trodahl, H.J.; Williams, G.V.M.; Bittar, A.*. 2004. Structural properties of nanocrystalline GaN:Mn films grown by ion-assisted deposition. American Physical Society. March Meeting. (2004 : Montreal). Abstract: L10.002 (Oral presentation).
  • Budde, F.; Ruck, B.J.*; Koo, A.; Granville, S.; Trodahl, H.J.; Bittar, A.*; Williams, G.V.M.; Ariza, M.J.; Bonnet, B.; Jones, D.J.; Metson, J.B.; Rubanov, S.; Monroe, P. 2005. Stabilization of amorphous GaN by oxygen. Journal of applied physics. Vol.98 no.6, p.1-4.
  • Trodahl, H.J.; Budde, F.; Ruck, B.J.*; Granville, S.; Koo, A.; Bittar, A.*. 2005. Raman spectroscopy of nanocrystalline and amorphous GaN. Journal of applied physics. Vol.97 no.8, p.1-5.
  • Granville, S.; Ruck, B.J.*; Budde, F.; Koo, A.; Downes, J.E.; Trodahl, H.J.; Bittar, A.*; Strickland, N.M.; Williams, G.V.M.; Lambrecht, W.R.L.; Learmonth, T.; Smith, K.E.; Kennedy, V.J.; Markwitz, A.; Schmitt, T. 2005. Optical conductivity and x-ray absorption and emission study of the band structure of MnN films. Physical review. B, Condensed matter and materials physics. Vol.72 no.20, 205127-31.
  • Koo, A; Budde, F.; Ruck, B.J.*; Trodahl, H.J.; Bittar, A.*. 2005. Optoelectronics of highly disordered gallium nitride. AMN-2 International Conference on Advanced Materials and Nanotechnology, 6-11 February, 2005, Queenstown. paper Th A2.3.
  • Ruck, B.J.*; Koo, A.; Granville, S.; Trodahl, H.J.; Williams, G.V.M.; Bittar, A.*; Betson, J.B. 2005. Physical and electronic structure of disordered gallium nitride. AMN -2 International Conference on Advanced Materials and Nanotechnology (2 : 2005 : Queenstown). poster PG16.5.
  • Budde, F.; Ruck, B.J.*; Granville, S.; Koo, A.; Trodahl, H.J.; Bittar, A.*. 2005. Growth and characterisation of rare earth nitride thin films. AMN-2 International Conference on Advanced Materials and Nanotechnology, 6-11 February, 2005, Queenstown. paper Fr A3.4.
  • Granville, S.; Budde, F.; Flewett, S.*; Koo, A.; Ruck, B.J.*; Trodahl, H.J.; Bittar, A.*; Williams, G.V.M.; Kennedy, V.J.; Markwitz, A.; Cairney, J. 2005. Properties of nanocrystalline GaN:Mn thin films. AMN -2 International Conference on Advanced Materials and Nanotechnology (2 : 2005 : Queenstown). paper Fr A3.5.
  • Koo, A.; Budde, F.; Ruck, B.J.*; Trodahl, H.J.; Bittar, A.*; Preston, A.R.H.*; Zeinert, A. 2006. Photoconductivity in nanocrystalline GaN and amorphous GaON. Journal of applied physics. Vol.99 (3), art. no.034312.
  • Koo, A; Budde, F.; Ruck, B.J.*; Trodahl, H.J.; Bittar, A.*; Preston, A.R.H.*. 2007. Photocurrent diffusion length in disordered GaN. Journal of materials science. Materials in electronics. Vol.18 Supl. 1 p.107-110.