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  • Inglis, A.D.; Wood, B.M.; Cote, M.; Young, R.B.; Early, M.D.*. 2003. Plateau flatness in the ACQHR: Do gates really help?. IEEE transactions on instrumentation and measurement. Vol.52 , no.2, p.569-573.
  • Inglis, A.D.; Wood, B.M.; Cote, M.; Young, R.B.; Early, M.D.*. 2003. Direct determination of capacitance standards using a quadrature bridge and a pair of quantized Hall resistors. IEEE transactions on instrumentation and measurement. Vol.52, no.2, p.559- 562.
  • Inglis, A.D.; Wood, B.M.; Cote, M.; Young, R.B.; Early, M.D.*. 2002. Plateaux flatness in the ACQHR : do gates really help?. Conference digest : Conference on Precision Electromagnetic Measurements, June, 2002. p.536- 537.
  • Inglis, A.D.; Wood, B.M.; Cote, M.; Young, R.B.; Early, M.D.*. 2002. Direct determination of capacitance standards using a quadrature bridge and a pair of quantized Hall resistors. Conference digest : Conference on Precision Electromagnetic Measurements, June, 2002. IEEE.
  • Hartland, A.; Jones, K.*; Williams, J.M.; Galloway, T.; Gallagher, B.L.; White, C.R.H.; Henini, M. 1992. A direct comparison of the quantized Hall resistance in high critical current gallium arsenide and silicon devices. Surface science. Vol.263: p.112-115.
  • Hartland, A.; Jones, K.*; Williams, J.M.; Davies, M.; Gallagher, B.L.; Galloway, T.; Henini, M.; Hughes, O.H. 1990. High accuracy measurements of quantized Hall resistance ratios RK(i)/RK(2i) for i=1 and 2 in GaAs and silicon. Conference Digest, Conference on Precision Electromagnetic Measurements, Meeting dates: 11-14 June 1990. p.344-345.
  • Harland, A.; Jones, K.*; Williams, J.M.; Gallagher, B.L.; Galloway, T. 1991. Direct comparison of the quantized hall resistance in gallium arsenide and silicon. Physical review letters. Vol.66(8): p.969-973.
  • Hall, B.D.*; Jeanneret, B.; Jeckelmann, B. 1999. Inductive measurements of the quantum hall effect.
  • Hall, B.D.*; Corney, A.C.*. 2000. Radio frequency and microwave measurement standards for New Zealand.
  • Gotoh, Y.; Matsumoto, K.; Bubanja, V.*; Vazquez, F.; Maeda, T.; Harris, J.S. 2000. Experimental and simulated results of room temperature single electron transistor formed by atomic force microscopy nano-oxidation process. Japanese journal of applied physics. Part 1. Vol.39, p.2334-2337.
  • Gotoh, Y.; Matsumoto, K.; Bubanja, V.*; Vazquez, F.; Maeda, T.; Harris, J.S. 1999. Experimental and simulated results of room temperature single electron transistor formed by AFM nano-oxidation process. International Conference on Solid State Devices and Materials, 1999. Extended abstracts. p.238-239.
  • Gabriel, W.P.*; Plester, D.J. 1981. A high power amplifier for humane stunning research. NELCON proceedings. Vol.18: p.39-47.
  • Gabriel, W.P.*; Corney, A.C.*. 1981. PEL electrical calibration supermarket. NELCON proceedings. Vol.18: p.135-138.
  • Gabriel, W.P.*. 1965. Digital electronics in science and industry. Radio, electronics and communications. Vol.20(6): p.11-15.
  • Gabriel, W.P.*. 1967. The future for industrial silicon controlled rectifier equipment. Radio, electronics and communications. Vol.22(6): p.12-14.
  • Gabriel, W.P.*. 1970. A high performance thyristor servo system. NELCON proceedings. Vol.7.
  • Falci, G.; Bubanja, V.*; Schon, G. 1991. Quantum dynamics of small-capacitance Josephson junctions in a general electromagnetic environment. Europhysics letters. Vol.16 no.3 (Sep.), p.109-114.
  • Falci, G.; Bubanja, V.*; Schon, G. 1991. Quasiparticle and Cooper pair tunneling in small capacitance Josephson junctions. Effects of the electromagnetic environment. Zeitschrift fuer Physik. B, Condensed Matter. Vol.85 no.3 (Oct.), p.451-458.
  • Early, M.D.*; Van Dam, M.A.*. 1999. Results from a detailed calculation of the sensitivity of a cryogenic current comparator. IEEE transactions on instrumentation and measurement. Vol.48(2), p.379-382.
  • Early, M.D.*; Van Dam, M.A.*. 1998. Results from a detailed calculation of the sensitivity of a cryogenic current comparator. Conference Digest. p.165-166.